Photocurrent generation through electron-exciton interaction at the organic semiconductor donor/acceptor interface
Identifieur interne : 000737 ( Main/Repository ); précédent : 000736; suivant : 000738Photocurrent generation through electron-exciton interaction at the organic semiconductor donor/acceptor interface
Auteurs : RBID : Pascal:13-0330485Descripteurs français
- Pascal (Inist)
English descriptors
Abstract
In this work, we report our effort to understand the photocurrent generation that is contributed via electron-exciton interaction at the donor/acceptor interface in organic solar cells (OSCs). Donor/ acceptor bi-layer heterojunction OSCs, of the indium tin oxide/copper phthalocyanine (CuPc)/fullerene (C60)/molybdenum oxide/Al type, were employed to study the mechanism of photocurrent generation due to the electron-exciton interaction, where CuPc and C60 are the donor and the acceptor, respectively. It is shown that the electron-exciton interaction and the exciton dissociation processes co-exist at the CuPc/C60 interface in OSCs. Compared to conventional donor/acceptor bi-layer OSCs, the cells with the above configuration enable holes to be extracted at the C60 side while electrons can be collected at the CuPc side, resulting in a photocurrent in the reverse direction. The photocurrent thus observed is contributed to primarily by the charge carriers that are generated by the electron-exciton interaction at the CuPc/C60 interface, while charges derived from the exciton dissociation process also exist at the same interface. The mechanism of photocurrent generation due to electron-exciton interaction in the OSCs is further investigated, and it is manifested by the transient photovoltage characteristics and the external quantum efficiency measurements.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000637
Links to Exploration step
Pascal:13-0330485Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photocurrent generation through electron-exciton interaction at the organic semiconductor donor/acceptor interface</title>
<author><name>LIJIA CHEN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute for Clean Energy and Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>QIAOMING ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Physical Science and Technology, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>YANLIAN LEI</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Physical Science and Technology, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>FURONG ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University</s1>
<s2>Kowloon Tong</s2>
<s3>HKG</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Kowloon Tong</wicri:noRegion>
</affiliation>
</author>
<author><name>BO WU</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University</s1>
<s2>Kowloon Tong</s2>
<s3>HKG</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Kowloon Tong</wicri:noRegion>
</affiliation>
</author>
<author><name>TING ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Physical Science and Technology, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>GUOXI NIU</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Physical Science and Technology, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>ZUHONG XIONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Physical Science and Technology, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
<author><name>QUNLIANG SONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute for Clean Energy and Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Chongqing 400715</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0330485</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0330485 INIST</idno>
<idno type="RBID">Pascal:13-0330485</idno>
<idno type="wicri:Area/Main/Corpus">000637</idno>
<idno type="wicri:Area/Main/Repository">000737</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1463-9076</idno>
<title level="j" type="abbreviated">PCCP, Phys. chem. chem. phys. : (Print)</title>
<title level="j" type="main">PCCP. Physical chemistry chemical physics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron interaction</term>
<term>Interface</term>
<term>Semiconductor materials</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Interaction électronique</term>
<term>Semiconducteur</term>
<term>Interface</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work, we report our effort to understand the photocurrent generation that is contributed via electron-exciton interaction at the donor/acceptor interface in organic solar cells (OSCs). Donor/ acceptor bi-layer heterojunction OSCs, of the indium tin oxide/copper phthalocyanine (CuPc)/fullerene (C<sub>60</sub>
)/molybdenum oxide/Al type, were employed to study the mechanism of photocurrent generation due to the electron-exciton interaction, where CuPc and C<sub>60</sub>
are the donor and the acceptor, respectively. It is shown that the electron-exciton interaction and the exciton dissociation processes co-exist at the CuPc/C<sub>60</sub>
interface in OSCs. Compared to conventional donor/acceptor bi-layer OSCs, the cells with the above configuration enable holes to be extracted at the C<sub>60</sub>
side while electrons can be collected at the CuPc side, resulting in a photocurrent in the reverse direction. The photocurrent thus observed is contributed to primarily by the charge carriers that are generated by the electron-exciton interaction at the CuPc/C<sub>60</sub>
interface, while charges derived from the exciton dissociation process also exist at the same interface. The mechanism of photocurrent generation due to electron-exciton interaction in the OSCs is further investigated, and it is manifested by the transient photovoltage characteristics and the external quantum efficiency measurements.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1463-9076</s0>
</fA01>
<fA03 i2="1"><s0>PCCP, Phys. chem. chem. phys. : (Print)</s0>
</fA03>
<fA05><s2>15</s2>
</fA05>
<fA06><s2>39</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Photocurrent generation through electron-exciton interaction at the organic semiconductor donor/acceptor interface</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LIJIA CHEN</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>QIAOMING ZHANG</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>YANLIAN LEI</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>FURONG ZHU</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BO WU</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>TING ZHANG</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>GUOXI NIU</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>ZUHONG XIONG</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>QUNLIANG SONG</s1>
</fA11>
<fA14 i1="01"><s1>Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute for Clean Energy and Advanced Materials, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>School of Physical Science and Technology, Southwest University</s1>
<s2>Chongqing 400715</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University</s1>
<s2>Kowloon Tong</s2>
<s3>HKG</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>16891-16897</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>26801</s2>
<s5>354000501997370620</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>35 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0330485</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>PCCP. Physical chemistry chemical physics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this work, we report our effort to understand the photocurrent generation that is contributed via electron-exciton interaction at the donor/acceptor interface in organic solar cells (OSCs). Donor/ acceptor bi-layer heterojunction OSCs, of the indium tin oxide/copper phthalocyanine (CuPc)/fullerene (C<sub>60</sub>
)/molybdenum oxide/Al type, were employed to study the mechanism of photocurrent generation due to the electron-exciton interaction, where CuPc and C<sub>60</sub>
are the donor and the acceptor, respectively. It is shown that the electron-exciton interaction and the exciton dissociation processes co-exist at the CuPc/C<sub>60</sub>
interface in OSCs. Compared to conventional donor/acceptor bi-layer OSCs, the cells with the above configuration enable holes to be extracted at the C<sub>60</sub>
side while electrons can be collected at the CuPc side, resulting in a photocurrent in the reverse direction. The photocurrent thus observed is contributed to primarily by the charge carriers that are generated by the electron-exciton interaction at the CuPc/C<sub>60</sub>
interface, while charges derived from the exciton dissociation process also exist at the same interface. The mechanism of photocurrent generation due to electron-exciton interaction in the OSCs is further investigated, and it is manifested by the transient photovoltage characteristics and the external quantum efficiency measurements.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001C01I</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Interaction électronique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Electron interaction</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Interacción electrónica</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Semiconducteur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Semiconductor materials</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Semiconductor(material)</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Interface</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Interface</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Interfase</s0>
<s5>03</s5>
</fC03>
<fN21><s1>308</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000737 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000737 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= *** parameter Area/wikiCode missing *** |area= IndiumV3 |flux= Main |étape= Repository |type= RBID |clé= Pascal:13-0330485 |texte= Photocurrent generation through electron-exciton interaction at the organic semiconductor donor/acceptor interface }}
This area was generated with Dilib version V0.5.77. |